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(R)
STTA112U
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 1A 1200V 65ns 1.5V
FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATION HIGH REVERSE VOLTAGE CAPABILITY DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode operations. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFRM IFSM T stg Tj Parameter Repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 s F = 5kHz square tp = 10ms sinusoidal Value 1200 6 10 20 - 65 to + 150 125 Unit V A A A C C They are particularly suitable in motor control circuitries, or in primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitablefor the secondaryof SMPSas high voltage rectifier diodes.
SMB
TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 5A
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STTA112U
THERMAL AND POWER DATA Symbol Rth(j-I) P1 Pmax Parameter Junction to lead thermal resistance Conduction power dissipation Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) IF(AV) = 0.8A = 0.5 Tlead= 93C Tlead= 90C Test conditions Value 23 1.4 1.5 Unit C/W W W
STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR
*
Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance
* tp = 380 s, < 2% ** tp = 5 ms , < 2%
Test conditions IF = 1A VR = 0.8 x VRRM Ip < 3.IF(AV) Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C
Min
Typ 1.1 90
Max 1.65 1.5 10 300 1.15 350
Unit V A V m
**
Vto Rd
Test pulses :
To evaluatethe maximum conduction losses use the following equation : P = Vto x I F(AV) + Rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum recovery current Softness factor Test conditions Tj = 25C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/s VR = 30V Tj = 125C VR = 600V dIF/dt = -8 A/s dIF/dt = -50 A/s Tj = 125C VR = 600V dIF/dt = -50 A/s IF = 1A 1.8 5 IF =1A 0.7 Min Typ 65 115 A Max Unit ns
IRM
S factor
TURN-ON SWITCHING Symbol t fr VFp Parameter Forward recovery time Peak forward voltage Test conditions Tj = 25C IF = 1 A, dIF/dt = 8 A/s measured at 1.1 x VF max Min Typ Max 900 35 Unit ns V
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STTA112U
Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (Maximum values).
IFM(A)
= 0.1 = 0.2 = 0.5
P1(W) 1.50 1.25
50.0
Tj=125C
10.0
1.00 0.75 0.50 0.25 0.00 0.0 0.1 0.2 0.3 IF(av) (A) 0.4 0.5 0.6 0.7 0.8 0.9 1.0
= 1
1.0
VFM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 3: Relative variation of thermal transient impedance junction to lead versus pulse duration.
Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence).
IRM(A) 15.0 12.5 10.0 7.5 5.0 2.5
dIF/dt(A/s)
IF=2*IF(av) VR=600V Tj=125C
0.0
0
20
40
60
80
100 120 140 160 180 200
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence).
Fig. 6: Softness factor (tb/ta) versus dIF/dt (Typical values).
trr(ns) 300
IF=2*IF(av)
S factor 1.00
VR=600V Tj=125C IF<2*IF(av) VR=600V Tj=125C
250 200 150 100 50
dIF/dt(A/s)
0.80
0.60
dIF/dt(A/s)
0
0
20
40
60
80
100 120 140 160 180 200
0.40
0
20
40
60
80
100 120 140 160 180 200
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STTA112U
Fig. 7: Relative variation of dynamic parameters versus junction temperature (Reference Tj=125C). Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence).
1.1 80
S factor
VFP(V) 70 60 50
IRM
IF=2*IF(av) Tj=125C
1.0 0.9 0.8 Tj(C) 0.7 25 50 75 100 125
40 30 20 10 0 0 20
dIF/dt(A/s)
40
60
80
100
Fig. 9: Forward recovery time versus dIF/dt (90% confidence).
tfr(ns) 800 700 600
VFR=1.1*VF max.
IF=2*IF(av)
Tj=125C
500 400 300 200 0 20
dIF/dt(A/s)
40
60
80
100
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STTA112U
APPLICATION DATA The 1200V TURBOSWITCHTM series has been designed to provide the lowest overall power losses in all frequency or high pulsed current operations. In such application (fig. A to D), the way of calculating the power losses is given below :
TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION LOSSES in the diode
REVERSE LOSSES in the diode
SWITCHING LOSSES in the diode
SWITCHING LOSSES in the diode due to the diode
Fig. A : "FREEWHEEL MODE".
SWITCHING TRANSISTOR
DIODE: TURBOSWITCH
IL
VR
tp T F = 1/T = tp/T
LOAD
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APPLICATION DATA (Cont'd) Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE.
PWM tp T = tp/T
F = 1/T
Fig. D : RECTIFIER DIODE.
Fig. E : STATIC CHARACTERISTICS.
I IF Rd VR V IR V to VF
Conduction losses : P1 = Vto x IF(AV) + Rd x IF2(RMS)
Reverse losses : P2 = VR x IR x (1 - )
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STTA112U
APPLICATION DATA (Cont'd) Fig. F : TURN-OFF CHARACTERISTICS.
V IL TRANSISTOR I t
Turn-on losses : (in the transistor, due to the diode) P5 =
VR x IRM 2 x (3+2 x S) F 6 x dIF dt VR x IRM x IL x(S + 2) x F + 2 x dIF dt
I dI F /dt V I RM ta tb t dI R /dt VR trr = ta + tb I dIF /dt = VR /L V IRM ta tb t dI R /dt VR
trr = ta + tb S = tb/ta
Turn-off losses :
DIODE
P3 =
VR x IRM 2 x x S x F 6 x dIF dt
S = tb / ta
RECTIFIER OPERATION
Turn-off losses : with non negligible serial inductance P3' =
VR x IRM 2 x S x F L x IRM 2 x F + 6 x dIF dt 2
P3, P3' and P5 are suitable for power MOSFET and IGBT
Fig. G : TURN-ON CHARACTERISTICS.
IF dI F /dt I Fmax
Turn-on losses : P4 = 0.4 (VFP - VF) x IFmax x tfr x F
0 VF V Fp
t
1.1V F 0 tfr
VF t
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PACKAGE MECHANICAL DATA SMB DIMENSIONS
E1
REF.
Millimeters Min. Max. 2.45 0.20 2.20 0.41 5.60 4.60 3.95 1.60
Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.063
D
A1 A2 b
1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75
E
c
A1
E E1
C L
A2
D
b
L
FOOTPRINT DIMENSIONS (in millimeters)
2.3
1.52
2.75
1.52
Ordering type STTA112U
Marking T03
Package SMB
Weight 0.107g
Base qty 2500
Delivery mode Tape & reel
Epoxy meets UL94,V0 Band indicates cathode
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8

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